APTM10DSKM09T3G
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likeAPTM10DSKM09T3G
Brand：Microchip
Model：APTM10DSKM09T3G
stock：539
Store：ShenZhen/Hongkong
DataSheet：
DataSheet
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Price：1+
￥113.16
The market price fluctuates. Please consult the customer service for the actual price
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| Installation type | Base installation |
| packing | bulk |
| series | - |
| Part status | On sale |
| working temperature | -40°C ~ 150°C(TJ) |
| Encapsulation/Housing | SP3 |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| Power - maximum | 390W |
| FET Type | 2 N-channels(two) |
| Drain source voltage (Vdss) | 100V |
| Current at 25 ° C - continuous drain (Id) | 139A |
| On resistance (maximum) for different Ids and Vgs | 10 mΩ @ 69.5A,10V |
| Vgs (th) (maximum) for different Ids | 4V @ 2.5mA |
| Gate charge (Qg) at different Vgs (maximum) | 350nC @ 10V |
| Input capacitance at different Vds (Ciss) (maximum) | 9875pF @ 25V |
| FET function | standard |
Common problem
Industry trends
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